硼掺杂纳米金刚石的制备及表征(英文)

作者:严仙荣;李晓杰;王小红;闫鸿浩; 刊名:稀有金属材料与工程 上传者:王泽锋

【摘要】采用高温真空扩散法制备了硼掺杂纳米金刚石。采用热重分析仪、X射线光电子能谱仪、X射线衍射仪、傅里叶变换红外光谱仪、智能型拉曼光谱仪、透射电子显微电镜等技术手段对制备的产物进行表征。结果表明,产物主要包含C、O、B元素,其质量分数分别为92.08%,7.14%,0.78%。硼掺杂纳米金刚石的XRD图谱中除了金刚石(111)D、(220)D衍射峰外,还有六方金刚石(100)D的衍射峰。B原子的引入造成纳米金刚石的缺陷增多,引起G峰移至1620 cm~(-1)。硼原子在金刚石中以2种状态存在,分别是C-B碳的取代原子和B-O的间隙硼原子。掺杂后的纳米金刚石颗粒形状和形貌无明显变化(爆轰纳米金刚石的粒径2~10nm),有少部分立方金刚石的存在。总而言之,硼的掺杂使得纳米金刚石的初始氧化温度提高了175℃,氧化速度缓慢,热稳定性能提高。

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Boron-doped diamond (IIb-type) exhibits many attractiveproperties, including high oxidation and impact resistance,excellent chemical stability, and semiconducting features[1].The incorporation of boron oxide affects nanodiamond’sproperties, including the crystal morphology and quality,which are important factors to control for device applications.Boron-doped diamond has attracted significant researchinterest[1,2]. Gheeraert investigated the amount of diboraneneeded to improve the crystalline quality of depositeddiamond by studying changes in Raman spectral features[3]. Aclear increase in the compressive component of the residualstress as a function of the doping level was observed for B/Cratios higher than 10-2 [4]. The dopant level also influenced thelattice parameters at a B/C ratio of 2×10-2. The expansion ofthe lattice parameters has been attributed to compressivethermal stress in the diamond films[5,6]. Kaner[7] studied theinfluence of boron on the oxidation properties of doped carbonfibers. The boron-derived protection of diamond againstoxidation has been attributed to the formation of boron oxide,electron transfer, and the inhibition of CO[8].Boron doping in diamond films is usually accomplished viachemical vapor deposition (CVD) during diamond growth or byion implantation after growth[9,10]. In the present paper, boronatoms were deposited on the nanodiamond surface by vacuumdiffusion. The boron-doped diamond was then prepared atelevated temperature under a protective

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