类金刚石薄膜的反应离子刻蚀

作者:吴卫东;陆晓曼;张继成;朱永红;郭强;唐永建;孙卫国 刊名:真空科学与技术学报 上传者:李春雨

【摘要】为了刻蚀出图形完整、侧壁陡直、失真度小、独立的类金刚石薄膜微器件,反应离子刻蚀是一种有效地刻蚀方法。研究了氧气与氩气的混合气体进行类金刚石薄膜刻蚀的主要工艺参数(刻蚀时间、有无掩膜、氩氧体积混合比、负偏压)。研究结果表明:在相同条件下,刻蚀速率随刻蚀时间变化不大;有无掩膜对刻蚀速率无明显影响;流量一定时,刻蚀速率随氩氧体积比的增大而降低,随负偏压的增大先增大后减小。实验得到最佳刻蚀条件,在此条件下,刻蚀出图形完整、侧壁陡直、失真度小的微器件,并成功制备出"独立"的微齿轮,进行了组装。

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类金刚石薄膜的反应离子刻蚀吴卫东13 陆晓曼1 ,2  张继成1  朱永红1 ,2  郭  强3  唐永建1  孙卫国2 (1中国工程物理研究院 激光聚变研究中心  绵阳  621900 ; 2四川大学 原子与分子研究所  成都  610065 ;31四川大学 物理科学与工程学院  成都   610065) Reactive Ion Etching of Diamond2Like Carbon FilmsWu Weidong 13,Lu Xiaoman1 ,2 ,Zhang Jicheng1 ,Zhu Yonghong1 ,2 ,Guo Qiang3 ,Tang Yongjian1 ,Sun Weiguo2 (1Research Center of Laser Fusion , CAEP, Mianyang 621900, China;2Institute of Atomic and Molecular Physics , Sichuan University , Chengdu 610065, China; 31School of physics and technology , Sichuan University , Chengdu 610065, China)   Abstract  A novel technique has been successfully developed to construct patterns with sub2micron feature size ondiamond2like carbon (DLC) films by reactive ion etching. The structures of the patterns were characterized with scanning electron microscope (SEM) . The influence of various etching conditions ,including etching time ,ratio of argon and oxygen ,Al mask ,and negative bias voltage ,on the quality of the reactive ion lithography was studied. The results show that the Ar/ O2 ratio and the bias strongly affect the etching rate. For example ,at a fixed gas flow rate ,the etching rate increases with the increase of the Ar/ O2 ratio ,and as the bias rises up ,the etching rate first increases and then decreases.After a judicious choice of the etching conditions ,we succeeded in fabricating a microgear with sharp vertical grooves ,wellde2fined features ,but little distortion.   Keywords  RIE ,ECR(electron cyclotron resonance) plasma ,DLC fi

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