具有低热阻的高温、稳定的SiC器件互连和封装

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文档信息

【标题】具有低热阻的高温、稳定的SiC器件互连和封装

【发明人】 Vivek Mehrotra 

【公开日期】2011-09-06

【分类号】US 438615,257E21511,29840,228193

【摘要】A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.

【类别】B2

【公开号】US08012865 B2

【申请号】US12683633

【国省名称】US

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