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【摘要】 The transient behavior of a semiconductor device consists of a Poisson equa-tion for the electric potential and of two nonlinear parabolic equations for the electrondensity and hole density.The electric potential equation is discretized by a mixed finiteelement method. The electron and hole density equations are treated by implicit-explicitmultistep finite element methods. The schemes are very efficient. The optimal order errorestimates both in time and space are derived.