High-performance and Damage-free Neutral Beam Etching for Advanced ULSI Devices

作者:Seiji Samukawa 刊名: 上传者:苏先花

【摘要】A novel 50 nm-width MOS gate etching process was established using a newly developed neutral beam etching system by optimizing the gas chemistry and the electrode bias condition.In a comparison of poly-Si gate etching using either SF_6 or Cl_2 gas chemistries,opposite etching characteristics were observed in the pattern profile.Consequently,the use of a mixture of these gases was proposed in order to achieve fine control of the etching profiles.The energy of the neutral beam was increased by applying a 600 kHz RF bias to the bottom electrode. The RF bias was very effective in increasing the etch rate and the anisotropy of the poly-Si gates,with no deterioration of the neutralization efficiency.The oxide leakage current achieved for a MOS capacitor etched by the neutral beam was one order of magnitude lower than that achieved by conventional plasma etching.

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