Multi-mode multi-band power amplifier module with high low-power efficiency(无全文)

作者:张旭光;金婕 刊名:Journal of Semiconductors 上传者:

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【摘要】Increasingly,mobile communications standards require high power efficiency and low currents in the low power mode.This paper proposes a fully-integrated multi-mode and multi-band power amplifier module(PAM)to meet these requirements.A dual-path PAM is designed for high-power mode(HPM),medium-power mode(MPM),and low-power mode(LPM) operations without any series switches for different mode selection.Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode.The PAM is tapeout with the In Ga P/Ga As heterojunction bipolar transistor(HBT) process and the0.18-m complementary metal-oxide semiconductor(CMOS) process.The test results show that the PAM achieves a very low quiescent current of 3 m A in LPM.Meanwhile,across the 1.7–2.0 GHz frequency,the PAM performs well.In HPM,the output power is 28 d Bm with at least 39.4% PAE and –40 d Bc adjacent channel leakage ratio1(ACLR1).In MPM,the output power is 17 d Bm,with at least 21.3% PAE and –43 d Bc ACLR1.In LPM,the output power is 8 d Bm,with at least 18.2% PAE and40 d Bc ACLR1.

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